transistors 1 publication date: november 2002 sjc00218bed 2sd1350, 2SD1350A silicon npn triple diffusion planar type for high breakdown voltage switching features ? high collector-base voltage (emitter open) v cbo ? large collector power dissipation p c ? low collector-emitter saturation voltage v ce(sat) ? m type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. absolute maximum ratings t a = 25 c electrical characteristics t a = 25 c 3 c 6.9 0.1 2.5 0.1 (1.0) (1.0) (1.5) (0.85) 0.45 0.05 0.55 0.1 (2.5) (2.5) 21 3 r 0.7 r 0.9 (0.4) 3.5 0.1 4.5 0.1 4.1 0.2 2.4 0.2 1.25 0.05 2.0 0.2 1.0 0.1 (1.5) unit: mm 1: base 2: collector 3: emitter m-a1 package note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. parameter symbol rating unit collector-base voltage 2sd1350 v cbo 400 v (emitter open) 2SD1350A 600 collector-emitter voltage 2sd1350 v ceo 400 v (base open) 2SD1350A 500 emitter-base voltage (collector open) v ebo 5v collector current i c 500 ma peak collector current i cp 1a collector power dissipation * p c 1w junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-base voltage 2sd1350 v cbo i c = 100 a, i e = 0 400 v (emitter open) 2SD1350A 600 collector-emitter voltage 2sd1350 v ceo i c = 500 a, i b = 0 400 v (base open) 2SD1350A 500 emitter-base voltage (collector open) v ebo i e = 100 a, i c = 05 v forward current transfer ratio h fe v ce = 5 v, i c = 30 ma 30 ? collector-emitter saturation voltage v ce(sat) i c = 250 ma, i b = 50 ma 1.5 v base-emitter saturation voltage v be(sat) i c = 250 ma, i b = 50 ma 1.5 v transition frequency f t v cb = 30 v, i e = ? 20 ma, f = 200 mhz 55 mhz collector output capacitance c ob v cb = 30 v, i e = 0, f = 1 mhz 7 pf (common base, input open circuited) turn-on time t on v cc = 200 v, i c = 100 ma 0.4 s i b1 = 10 ma, i b2 = ? 10 ma fall time t f v cc = 200 v, i c = 100 ma 0.7 s i b1 = 10 ma, i b2 = ? 10 ma storage time t stg v cc = 200 v, i c = 100 ma 3.6 s i b1 = 10 ma, i b2 = ? 10 ma note) * : printed circuit board: copper foil area of 1 cm 2 or more, and the board thickness of 1.7 mm for the collector portion
2sd1350, 2SD1350A 2 sjc00218bed v be(sat) ? i c h fe ? i c f t ? i e p c ? t a i c ? v ce v ce(sat) ? i c c ob ? v cb 0 160 40 120 80 140 20 100 60 0 1.2 1.0 0.8 0.6 0.4 0.2 copper plate at the collector is more than 1 cm 2 in area, 1.7 mm in thickness collector power dissipation p c ( w ) ambient temperature t a ( c ) 012 10 8 26 4 0 120 100 80 60 40 20 t a = 25 c 0.9 ma 0.7 ma 0.5 ma 0.3 ma 0.1 ma 0.8 ma 0.6 ma 0.4 ma 0.2 ma i b = 1.0 ma collector current i c ( ma ) collector-emitter voltage v ce ( v ) 1 10 100 1 000 0.01 0.1 1 10 100 i c / i b = 5 25 c ? 25 c t a = 75 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 1 10 100 1 000 0.01 0.1 1 10 100 i c / i b = 5 t a = ? 25 c 25 c 75 c base-emitter saturation voltage v be(sat) ( v ) collector current i c ( ma ) 1 10 100 1 000 0 120 100 80 60 40 20 v ce = 5 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) ? 0.001 ? 0.01 ? 0.1 ? 1 0 60 50 40 30 20 10 v cb = 30 v t a = 25 c transition frequency f t ( mhz ) emitter current i e ( a ) 10 100 1 000 0 30 25 20 15 10 5 i e = 0 f = 1 mhz t a = 25 c collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf)
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